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Power Transistors
2SD2242, 2SD2242A
Silicon NPN triple diffusion planar type Darlington
Unit: mm
4.20.2
For power amplification I Features
* High forward current transfer ratio hFE * High-speed switching * Allowing supply with the radial taping
10.00.2 1.00.2
5.00.1
13.00.2
2.50.1
1.20.1 1.480.2
90
C 1.0 2.250.2
18.00.5 Solder Dip
I Absolute Maximum Ratings TC = 25C
Parameter Collector to base voltage Collector to emitter voltage 2SD2242 2SD2242A 2SD2242 2SD2242A VEBO ICP IC TC = 25C Ta = 25C Tj Tstg PC VCEO Symbol VCBO Rating 60 80 60 80 5 8 4 15 2 150 -55 to +150 C C V A A W V Unit V
0.650.1 0.650.1 0.350.1 1.050.1 0.550.1 2.50.2 2.50.2 123 0.550.1
Emitter to base voltage Peak collector current Collector current Collector power dissipation
1: Base 2: Collector 3: Emitter MT-4-A1 Package
Internal Connection
C B
Junction temperature Storage temperature
I Electrical Characteristics TC = 25C
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD2242 2SD2242A hFE1 hFE2 * Base to emitter voltage Collector to emitter saturation voltage VBE VCE(sat) fT ton tstg tf VCE = 3 V, IC = 0.5 A VCE = 3 V, IC = 3 A VCE = 3 V, IC = 3 A IC = 3 A, IB = 12 mA IC = 5 A, IB = 20 mA Transition frequency Turn-on time Storage time Fall time Note) *: Rank classification Rank hFE2 Q R VCE = 10 V, IC = 0.5 A, f = 1 MHz IC = 3 A, IB1 = 12 mA, IB2 = -12 mA, VCC = 50 V 20 0.5 4 1 2SD2242 2SD2242A 2SD2242 2SD2242A IEBO VCEO ICEO Symbol ICBO Conditions VCB = 60 V, IE = 0 VCB = 80 V, IE = 0 VCE = 30 V, IB = 0 VCE = 40 V, IB = 0 VEB = 5 V, IC = 0 IC = 30 mA, IB = 0 60 80 1 000 2 000 Min Typ
E
Max 200 200 500 500 2 A V A Unit A
Forward current transfer ratio
10 000 2.5 2 4 MHz s s s V V
2 000 to 5 000 4 000 to 10 000
350
Power Transistors
PC T a
20 10 (1) TC=Ta (2) Without heat sink (PC=2.0W) TC=25C IB=4.0mA
2SD2242, 2SD2242A
IC VCE
10 VCE=3V
IC VBE
Collector power dissipation PC (W)
Collector current IC (A)
15 (1)
Collector current IC (A)
8
6
3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA
8
25C 6 TC=100C -25C
10
4
4
5 (2)
2
2
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10
0 0 0.8 1.6 2.4 3.2
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=250 30 10 3 1 TC=100C -25C 0.3 0.1 0.03 0.01 0.01 0.03 25C 105
hFE IC
10000
Cob VCB
Collector output capacitance Cob (pF)
VCE=3V IE=0 f=1MHz TC=25C
Forward current transfer ratio hFE
3000 1000 300 100 30 10 3 1 0.1
TC=100C 104 25C -25C
103
102
0.1
0.3
1
3
10
10 0.01 0.03
0.1
0.3
1
3
10
0.3
1
3
10
30
100
Collector current IC (A)
Collector current IC (A)
Collector to base voltage VCB (V)
Area of safe operation (ASO)
100 30 Non repetitive pulse TC=25C 1000
Rth(t) t
Note: Rth was measured at Ta=25C and under natural convection. (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink 100 (1) (2) 10
10 ICP IC 3 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 10ms DC t=1ms
Thermal resistance Rth(t) (C/W)
Collector current IC (A)
1
2SD2242 2SD2242A
0.1 10-3
10-2
10-1
1
10
102
103
104
Collector to emitter voltage VCE (V)
Time t (s)
351
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2001 MAR
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